CWE-1246: Improper Write Handling in Limited-write Non-Volatile Memories

BaseIncomplete

The product does not implement or incorrectly implements wear leveling operations in limited-write non-volatile memories.

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Extended Description

Non-volatile memories such as NAND Flash, EEPROM, etc. have individually erasable segments, each of which can be put through a limited number of program/erase or write cycles. For example, the device can only endure a limited number of writes, after which the device becomes unreliable. In order to wear out the cells in a uniform manner, non-volatile memory and storage products based on the above-mentioned technologies implement a technique called wear leveling. Once a set threshold is reached, wear leveling maps writes of a logical block to a different physical block. This prevents a single physical block from prematurely failing due to a high concentration of writes. If wear leveling is improperly implemented, attackers may be able to programmatically cause the storage to become unreliable within a much shorter time than would normally be expected.

Technical Details

Structure
Simple

Applicable To

Languages
Not Language-Specific
Platforms
Not OS-Specific

Frequently Asked Questions

What is CWE-1246: Improper Write Handling in Limited-write Non-Volatile Memories?+

CWE-1246: Improper Write Handling in Limited-write Non-Volatile Memories is a Common Weakness Enumeration (CWE) entry maintained by MITRE. The product does not implement or incorrectly implements wear leveling operations in limited-write non-volatile memories. Non-volatile memories such as NAND Flash, EEPROM, etc. have individually erasable segments, each of which can be put through a limited number of program/erase or write cycles. For example, the device can only endure a limited number of writes, after which the device becomes unreliable. In order to wear out the cells in a uniform manner, non-volatile memory and storage products based on the above-mentioned technologies implement a technique called wear leveling. Once a set threshold is reached, wear leveling maps writes of a logical block to a different physical block. This prevents a single physical block from prematurely failing due to a high concentration of writes. If wear leveling is improperly implemented, attackers may be able to programmatically cause the storage to become unreliable within a much shorter time than would normally be expected.

What are the security consequences of Improper Write Handling in Limited-write Non-Volatile Memories?+

If exploited, CWE-1246 (Improper Write Handling in Limited-write Non-Volatile Memories) it can compromise Availability, leading to outcomes such as DoS: Instability.

How do you prevent or mitigate Improper Write Handling in Limited-write Non-Volatile Memories?+

Recommended mitigations for CWE-1246 include: Include secure wear leveling algorithms and ensure they may not be bypassed.

Which programming languages are affected by Improper Write Handling in Limited-write Non-Volatile Memories?+

CWE-1246 commonly affects Not Language-Specific. Note that weaknesses are often language-agnostic patterns, so secure coding practices apply broadly.

What is the difference between a CWE and a CVE?+

A CWE (Common Weakness Enumeration) like CWE-1246 describes a category of software weakness — the underlying flaw type. A CVE (Common Vulnerabilities and Exposures) identifies a specific, real-world vulnerability in a particular product. In short, a CWE is the kind of mistake, and a CVE is an instance of that mistake being found in software.

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